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2 works

Work: Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

  1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 citations
    ABI

  2. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 citations
    ABI