Silicon Carbide Semiconductor Technologies

107 works

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 citations
ABI
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
ArticleSemiconductor materials and devicesMicro and Nanostructures20235 citations
ABI
Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6
ArticleSilicon and Solar Cell TechnologiesThin Solid Films20105 citations
ABI
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6
ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 citations
ABI
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4
ArticleAdvancements in Semiconductor Devices and Circuit Design20144 citations
ABI
Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5
ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 citations
ABI
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
I. G. Atabaev, Kh. N. Juraev, V. A. Pak
ArticleSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 citations
ABI
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 citations
ABI
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 citations
ABI
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 citations
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 citations
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
ArticleSilicon and Solar Cell TechnologiesMaterials science forum20052 citations
ABI
Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron
I. G. Atabaev, Kh. N. Juraev
ArticleSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 citations
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SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE
M. S. Paizullakhanov, L. S. Suvonova, N.N. Cherenda
ArticleChemical and Physical Properties of MaterialsHigh Temperature Material Processes An International Quarterly of High-Technology Plasma Processes20232 citations
ABI
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4
ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 citations
ABI
Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers
S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1
ArticleSemiconductor materials and interfacesphysica status solidi (a)19821 citations
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
ArticleSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 citations
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Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 citations
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 citations
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 citations
ABI
High Energy Resolution Detectors Based on 4H-SiC
Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5
ArticleParticle Detector Development and PerformanceMaterials science forum20051 citations
ABI
Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev
ArticleSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 citations
ABI
Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder
M.N. Mirzayev, B. A. Abdurakhimov, E. Demir +14
ArticleMuon and positron interactions and applicationsPhysica B Condensed Matter20211 citations
ABI
Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion
Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2
ArticleSilicon Carbide Semiconductor TechnologiesMaterials Science20241 citations
ABI

Silicon Carbide Semiconductor Technologies

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

Optimization of vertically stacked nanosheet FET immune to self-heating

Oxide film assisted dopant diffusion in silicon carbide

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

Influence of Defects on Low Temperature Diffusion of Boron in SiC

Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

High Energy Resolution Detectors Based on 4H-SiC

Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder

Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion