Enrique Comesaña

1 works

CITIUS, Universidad de Santiago de Compostela, Spain

1. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   ArticleAdvancements in Semiconductor Devices and Circuit Design20144 citations

   ABIABI:AkademIndex/openalex/2026.other.386764