Silicon Carbide Semiconductor Technologies

107 works

Investigation of 4H-SiC Layers Implanted by Al Ions
E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2
ArticleSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20070 citations
ABI
4H-SiC High Temperature Spectrometers
Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 citations
ABI
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 citations
ABI
Heterojunctions based on Silicon Carbide
Andrey A. Lebedev
ArticleAdvanced ceramic materials synthesisAIP conference proceedings20070 citations
ABI
Carrier Removal in Electron Irradiated 4H and 6H SiC
M. Mikelsen, Ulrike Großner, J. H. Bleka +6
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20080 citations
ABI
Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
G. Bertuccio, S. Caccia, F. Nava +7
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
ABI
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
ABI
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
ABI
Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2
ArticleSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 citations
ABI
Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
Donatella Puglisi, Gaetano Foti, G. Bertuccio
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
ABI
Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
Joanna Wasyluk, T. S. Perova, С. А. Кукушкін +3
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20100 citations
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 citations
ABI
Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD
Timur Saliev, S. L. Lutpullaev, А. Кутлимратов +1
ArticleDiamond and Carbon-based Materials ResearchApplied Solar Energy20150 citations
ABI
Recombination Processes in 4H-SiC pn Structures
Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20160 citations
ABI
Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction
Xuejian Xie, Xiaobo Hu, Xiufang Chen +7
ArticleAdvanced ceramic materials synthesisCrystEngComm20170 citations
ABI
Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability
Jörg Henkel, Paolo Montuschi
ArticleAdvancements in Semiconductor Devices and Circuit DesignComputer20170 citations
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
ArticleSemiconductor materials and interfacesRadioelectronics and Communications Systems20170 citations
ABI
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3
ArticleSemiconductor materials and devicesMaterials science forum20180 citations
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
ArticlePulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 citations
ABI
NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)
Gulkhayo Oybekovna Akbarova
ArticleAdvancements in Semiconductor Devices and Circuit DesignEPRA International Journal of Research & Development (IJRD)20200 citations
ABI
Application of Methane and Micro Silica for Silicon Carbide Synthesis
B. M. Abdurakhmanov, Mirtemir Kurbanov, Ulugbek Nuraliev +1
ArticleAdvanced ceramic materials synthesisPowder Metallurgy and Metal Ceramics20220 citations
ABI
Enhancing Energy Efficiency and Classification Modeling Through a Combined Approach of LightGBM and Stratified KFold Cross-Validation
Sushma Kakkar, A. Lakshmi, Anand Deva Durai C +6
ArticleMachine Learning in Materials ScienceElectric Power Components and Systems20240 citations
ABI
A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement
Guoping Wang, Hao Chen, Fengyuan Yu +8
ArticleSemiconductor materials and devicesIEEE Transactions on Transportation Electrification20240 citations
ABI
SiC plasma characterization produced by 3 ns pulse laser at 10 10 W/cm 2 intensity
L. Torrisi, A. Torrisi, M. Cutroneo
ArticleSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids20240 citations
ABI
Design of modified reference phase modulation based boost chopper fed fifteen level stepped DC link hybrid converter
R. Uthirasamy, S. Vishnu Kumar, Christo Ananth +6
ArticleMultilevel Inverters and ConvertersScientific Reports20240 citations
ABI

Silicon Carbide Semiconductor Technologies

Investigation of 4H-SiC Layers Implanted by Al Ions

4H-SiC High Temperature Spectrometers

Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

Heterojunctions based on Silicon Carbide

Carrier Removal in Electron Irradiated 4H and 6H SiC

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD

Recombination Processes in 4H-SiC pn Structures

Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction

Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability

On mechanism of radiative sensitivity of power diode direct voltage drop

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)

Application of Methane and Micro Silica for Silicon Carbide Synthesis

Enhancing Energy Efficiency and Classification Modeling Through a Combined Approach of LightGBM and Stratified KFold Cross-Validation

A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement

SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

Design of modified reference phase modulation based boost chopper fed fifteen level stepped DC link hybrid converter