Heterojunctions based on Silicon Carbide

Abstract

In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world’s interest in fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This presentation considers studies concerned with fabrication technologies of various types of heterostructures constituted by different SiC polytypes, and their electrical parameters investigation.

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Identifiers

DOI

10.1063/1.2729878

Citations and references