4H-SiC High Temperature Spectrometers
Abstract
The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of Rutherford back scattering/channeling spectrometry and cross-sectional transmission electron microscopy. The detector structures fabricated on this thin ion implanted p+-n junctions operated in the temperature range of 16-170 oC with reproducible stable spectrometric characteristics. The charge collection efficiency and the energy resolution of detectors improved with rising temperature up to 170 oC, that was obtained in SiC detectors for the first time.