Article

Recombination Processes in 4H-SiC pn Structures

Anatoly M. Strel’chukA.F. Ioffe Physicotechnical Institute RASBaptiste BérenguierAix-Marseille UniversitéE. B. YakimovRASLaurent OttavianiAix-Marseille Université

Materials science forumbook series2016en

ABI

Abstract

Commercial 4H-SiC p + n structures with an uncompensated donor concentration (N d -N a ) of ~1.5∙10 15 cm -3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

Topics

Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Identifiers

DOI: 10.4028/www.scientific.net/msf.858.345

Citations and references

Cited by 00 references

Metrics — AkademScholar