Article

Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

D.B. ShustovRussian Academy of SciencesE. KolesnikovaA.F. Ioffe Physicotechnical Institute RASEvgenia V. KalininaIoffe Physicotechnical Institute RASВ.А. СкуратовJoint Institute for Nuclear ResearchM. V. ZamoryanskayaRussian Academy of Sciences

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenabook series2009en

ABI

Abstract

Defects distribution in 6H-SiC implanted with Bi ions was investigated with the local cathodoluminescence. There are two typical areas with radiation defects found in implanted samples. Implanted layer was about 27 micrometers depth. Far-action area with radiation defects was observed for the first time. Thickness of this area varies from few tens up to hundreds micrometers. This effect depended on concentration of defects i.e. irradiation fluence. Radiation defects at this area disappeared after annealing the sample if fluence is not to high.

Topics

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifiers

DOI: 10.4028/www.scientific.net/ssp.156-158.401

Citations and references

Cited by 08 references

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