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Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction

Xuejian XieChinaXiaobo HuChinaXiufang ChenChinaFafu LiuChinaXianglong YangChinaXiangang XuChinaHongfei WangChinaJian LiChinaPeng YuChinaRuiqi WangChina
CrystEngCommjournal2017en
ABI

Abstract

The neutron diffraction method was adopted to study the three-dimensional residual stress distribution in SiC bulk crystals for the first time.

Topics

Advanced ceramic materials synthesisAluminum Alloys Composites PropertiesSilicon Carbide Semiconductor Technologies

Identifiers

DOI
10.1039/c7ce01552f

Citations and references

Cited by 021 references
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