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Article

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

N.I. KuznetsovIoffe Physicotechnical Institute RASAndrey MorozovD. A. BaumanV. IvantsovV.A. SukhoveyevIrina P. NikitinaNewcastle UniversityA. S. ZubrilovRussian Academy of SciencesS. RendakovaTDI, IncV. DmitrievDavid Jonathan HofmanGyörgy VidaBudapest University of Technology and Economics
Materials science forumbook series2000en
ABI

Abstract

No abstract available.

Topics

Silicon Carbide Semiconductor Technologies

Identifiers

DOI
10.4028/www.scientific.net/msf.338-342.229

Citations and references

Cited by 20 references
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