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N.I. Kuznetsov

11 works

Ioffe Physicotechnical Institute RAS

  1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

    N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 citations
    ABI

  2. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 citations
    ABI

  3. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    ArticleThin-Film Transistor TechnologiesMaterials science forum19980 citations
    ABI

  4. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

    Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 citations
    ABI

  5. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 citations
    ABI

  6. Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions

    N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1

    ArticleGaN-based semiconductor devices and materialsMaterials science forum20000 citations
    ABI

  7. Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

    Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 citations
    ABI

  8. Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability

    L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations
    ABI

  9. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

    G. Sarov, Roumen Kakanakov, T. Cholakova +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations
    ABI

  10. Porous SiC: New Applications through In- and Out- Dopant Diffusion

    M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

    ArticleSemiconductor materials and devicesMaterials science forum20030 citations
    ABI

  11. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations
    ABI