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4H-SiC pn Diode Grown by LPE Method for High-Power Applications

N.I. KuznetsovIoffe Physicotechnical Institute RASD. A. BaumanA.V. GavrilinIoffe Physicotechnical Institute RASLiliana KassamakovaBulgarian Academy of SciencesRoumen KakanakovBulgarian Academy of SciencesG. SarovBulgarian Academy of SciencesT. CholakovaBulgarian Academy of SciencesKonstantinos ZekentesFoundation for Research and Technology-Hellas(FORTH)V. I. DimitrovFatih University
Materials science forumbook series2003en
ABI

Abstract

No abstract available.

Topics

Silicon Carbide Semiconductor TechnologiesGaN-based semiconductor devices and materialsAdvanced DC-DC Converters

Identifiers

DOI
10.4028/www.scientific.net/msf.433-436.867

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Cited by 06 references
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