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Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Roumen KakanakovBulgarian Academy of SciencesLiliana KassamakovaBulgarian Academy of SciencesN. HristevaBulgarian Academy of SciencesG. LepoevaBulgarian Academy of SciencesN.I. KuznetsovIoffe Physicotechnical Institute RASKonstantinos ZekentesFoundation for Research and Technology-Hellas(FORTH)
Materials science forumbook series2002en
ABI

Abstract

No abstract available.

Topics

Silicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionSemiconductor materials and devices

Identifiers

DOI
10.4028/www.scientific.net/msf.389-393.917

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Cited by 00 references
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