Works citing this work

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Work: 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

1. Reliability of 4H-SiC p-n Diodes on LPE Grown Layers

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2. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

   ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 citations

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