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A. É. Atamuratov

37 works

Urgench State University, Urgench, Uzbekistan

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 citations
    ABI

  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    ArticleSemiconductor materials and devicesTechnical Physics Letters20186 citations
    ABI

  3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    ArticleAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 citations
    ABI

  4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations
    ABI

  5. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    ArticleSemiconductor materials and devicesMicro and Nanostructures20235 citations
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations
    ABI

  7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    ArticleAdvancements in Semiconductor Devices and Circuit Design20144 citations
    ABI

  8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20074 citations
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    ArticleSemiconductor materials and devicesApplied Sciences20203 citations
    ABI

  10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    ArticleSemiconductor materials and devicesResults in Physics20183 citations
    ABI

  11. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    ArticleSemiconductor materials and devicesTechnical Physics20193 citations
    ABI

  12. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    ArticleSilicon and Solar Cell Technologies20222 citations
    ABI

  13. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    ArticleGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 citations
    ABI

  14. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 citations
    ABI

  15. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    ArticleSemiconductor materials and devicesApplied Sciences20202 citations
    ABI

  16. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20102 citations
    ABI

  17. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Articlesolar cell performance optimization20231 citations
    ABI

  18. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ArticleSemiconductor materials and devices20241 citations
    ABI

  19. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    ArticleAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 citations
    ABI

  20. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Article2D Materials and ApplicationsApplied Sciences20231 citations
    ABI

  21. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    ArticleIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 citations
    ABI

  22. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    ArticleElectric Power Systems and Control19950 citations
    ABI

  23. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    ArticleSemiconductor materials and devicesTechnical Physics19970 citations
    ABI

  24. Tunable SiO2/Si-based nanostructures

    А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

    ArticleAdvanced Surface Polishing TechniquesInorganic Materials20090 citations
    ABI

  25. Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

    A. É. Atamuratov

    ChapterSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20090 citations
    ABI