A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
A. É. AtamuratovDepartment of Physics, Urgench State University, 14, Kh.Alimdjan str., Urgench, 220100, UzbekistanD. R. RajapovDepartment of Physics, Urgench State University, 14, Kh.Alimdjan str., Urgench, 220100, UzbekistanM. M. KhalilloevDepartment of Physics, Urgench State University, 14, Kh.Alimdjan str., Urgench, 220100, UzbekistanK. SivasankaranDepartment of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Vellore, 632014, Tamil Nadu, IndiaM. BalasubbareddyDepartment of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Vellore, 632014, Tamil Nadu, IndiaА. YusupovDepartment of Radiotechnics and Electronics, Tashkent University of Information Technologies, 108 Amir Temur Str., Tashkent, 100084, Uzbekistan
ABI
Abstract
No abstract available.
Topics
Identifiers
Citations and references
Metrics — AkademScholar · Coming soon