Tunable SiO2/Si-based nanostructures
А. Н. ГеоргобианиLebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, RussiaA. É. AtamuratovAl-Khorezmi State University, ul. Kh. Alimdzhana 14, Urgench, 740000, UzbekistanU. A. AminovAl-Khorezmi State University, ul. Kh. Alimdzhana 14, Urgench, 740000, UzbekistanT. A. AtamuratovNational University of Uzbekistan, Vuzgorodok, Tashkent, 700095, Uzbekistan
ABI
Abstract
We model the formation of a nanoscale potential well with quantum wires on the semiconductor surface near the SiO2/Si interface owing to a special charge distribution in the oxide. We consider an SiO2/Si structure in the form of a cylindrical substrate covered with a coaxial oxide layer. The charge distribution in the oxide is taken to have the form of charged circular rings of finite thickness, coaxial with the cylindrical substrate. The parameters of the quantum wires are analyzed in relation to the charge distribution and density. Reducing the separation between two charged rings decreases the width of the quantum wires produced on the semiconductor surface and increases their depth.
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