Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET
A. É. AtamuratovDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanD. U. MatrasulovDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanP. K. KhabibullaevDepartment of Thermal Physics, Academy of Sciences of Uzbekistan, Tashkent, 700135, Uzbekistan
ABI
Abstract
No abstract available.