B. O. Jabbarova

8 works

Urgench State University, Urgench, Uzbekistan

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
PreprintAdvancements in Semiconductor Devices and Circuit Design20216 citations
ABI
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 citations
ABI
Linearized KdV equation on a metric graph
Z. A. Sobirov, Maqsad. I. Akhmedov, O.V. Karpova +1
ArticleAdvanced Mathematical Physics ProblemsNanosystems Physics Chemistry Mathematics20153 citations
ABI
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov
ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 citations
ABI
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
ArticleSemiconductor materials and devices20241 citations
ABI
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5
ArticleAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 citations
ABI
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1
ArticleSemiconductor materials and devicesEast European Journal of Physics20250 citations
ABI
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2
Article2D Materials and ApplicationsEast European Journal of Physics20260 citations
ABI