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The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

A.K. UteniyazovKarakalpak State University, Ch. Abdirov Street 1, Nukus 230112, UzbekistanA. Yu. LeydermanPhysical-Technical Institute, Scientific Association "Physics-Sun", Uzbek Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, UzbekistanM. V. GafurovaAcademy of Science of Uzbekistan, Y. Gulomov Street 70, Tashkent 100047, UzbekistanKh. N. JuraevPhysical-Technical Institute, Scientific Association "Physics-Sun", Uzbek Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, UzbekistanK. A. DauletovKarakalpak State University, Ch. Abdirov Street 1, Nukus 230112, Uzbekistan
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Abstract

It was established that ultrasonic treatments (USTs) have practically no effect on the patterns of current flow in the Al‐Al 2 O 3 ‐ p ‐CdTe‐Mo structure in the forward direction, namely, as in the absence of ultrasonic action, they appear in the sequence J ∼ V , J ∼ V 2 , J ∼ V 5.3 , and J∼ V 2 . The effect of ultrasonic treatments affects only the magnitude of the flowing current; at low voltages, the current becomes somewhat larger, and at high voltages, it practically does not change. Changes in the magnitude of the flowing current are explained on the basis of the assumption that the recombination of nonequilibrium carriers in such a structure occurs through complex pair recombination complexes and, as a result of ultrasonic treatments, the number of both small acceptors and deep recombination centers increases.

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