Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
Abstract
In this work, the influence of the local oxide trapped charge on the transfer Id-Vg characteristics and capacitance of the gatetoI. INTRODUCTION source (drain) connection of the silicon-on-insulator (SOI) structure-based FinFET is simulated. Id-Vg characteristics are simulated by using the drift-diffusion transport model. Capacitance-Voltage characteristics of the gate-to-source capacitance are simulated by using a small AC signal method. The Id-Vg characteristics and gate-to-source (gate-drain) capacitance are investigated at different linear sizes and positions of the local oxide trapped charge along the channel. The results of the simulation show that the threshold voltage monotonically decreases with an increase in the linear size of the local charge, and gate-to-source capacitance monotonically increases with an increase in the distance between the source-channel border and the center of the local charge.