Works cited by this work

24 works

Work: Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

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2. Modeling Temperature Dependence of The Combined Density of States in Heterostructures with Quantum Wells Under the Influence of a Quantizing Magnetic Field

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3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

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6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

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   ArticleAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 citations

   ABIABI:AkademIndex/openalex/2017.article.000161

7. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

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8. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

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9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

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10. Origin of NBTI variability in deeply scaled pFETs

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11. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

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13. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

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14. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

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    ArticleAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 citations

    ABIABI:AkademIndex/openalex/2019.article.000603

15. Comparison of 2D and 3D p-n Junction Differential Conductance and Diffusion Capacitance

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16. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

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17. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

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    ABIABI:AkademIndex/openalex/2026.other.541488

18. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

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