Article

Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

M. BalasubbareddyDepartment of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Tamil Nadu, Vellore, 632014, IndiaK. SivasankaranDepartment of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology, Tamil Nadu, Vellore, 632014, IndiaA. É. AtamuratovDepartment of Physics, Urgench State University, 14, Kh. Alimdjan Str, 220100, Urgench, UzbekistanM. M. KhalilloevDepartment of Physics, Urgench State University, 14, Kh. Alimdjan Str, 220100, Urgench, Uzbekistan

Journal of Computational Electronicsjournal2025en

ABI

Abstract

No abstract available.

Topics

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

Identifiers

DOI: 10.1007/s10825-025-02384-5

Citations and references

Cited by 027 references

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