Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface
L. O. OlimovBabur Andizhan State University, ul. Universiteta 129, Andizhan, 710000, Uzbekistan
ABI
Abstract
The effect of alkali metals on carrier drift from grain boundaries to a polycrystalline silicon surface is experimentally studied. The results obtained show that an increase in the dopant concentration during the diffusion, desorption, and adsorption of alkali metals along grain boundaries leads to an increase in the potential barrier.