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Advancements in Semiconductor Devices and Circuit Design

147 ta ish

  1. Transport properties of silicon doped with manganese via low-temperature diffusion

    М. К. Бахадырханов, Г. Х. Мавлонов, С. Б. Исамов +4

    MaqolaSilicon and Solar Cell TechnologiesInorganic Materials201124 iqtibos
    ABI

  2. Modeling on the temperature dependence of the magnetic susceptibility and electrical conductivity oscillations in narrow-gap semiconductors

    U. I. Erkaboev, G. Gulyamov, J. I. Mirzaev +1

    MaqolaQuantum and electron transport phenomenaInternational Journal of Modern Physics B202020 iqtibos
    ABI

  3. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 iqtibos
    ABI

  4. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos
    ABI

  5. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 iqtibos
    ABI

  6. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

    G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 iqtibos
    ABI

  7. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics202410 iqtibos
    ABI

  8. Galvano- and thermo-magnetic effects at low and high temperatures within non-Markovian quantum Langevin approach

    I. B. Abdurakhmanov, G. G. Adamian, N. V. Antonenko +1

    MaqolaQuantum and electron transport phenomenaPhysica A Statistical Mechanics and its Applications201810 iqtibos
    ABI

  9. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 iqtibos
    ABI

  10. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19847 iqtibos
    ABI

  11. Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

    Rustam Yavkachovich Rasulov, N. Z. Mamadalieva, R. R. Sultanov

    MaqolaSemiconductor materials and interfacesRussian Physics Journal20207 iqtibos
    ABI

  12. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos
    ABI

  13. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  14. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20127 iqtibos
    ABI

  16. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    MaqolaOptical properties and cooling technologies in crystalline materialsLow Temperature Physics20227 iqtibos
    ABI

  17. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  18. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  19. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
    ABI

  20. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos
    ABI

  21. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  22. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  23. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 iqtibos
    ABI

  24. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, Mukhammadjon G. Dadamirzaev +1

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20095 iqtibos
    ABI

  25. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI