Maqola

The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

A. É. AtamuratovUrgench State University, 220100, Urgench, UzbekistanB. O. JabbarovaUrgench State University, 220100, Urgench, UzbekistanM. M. KhalilloevUrgench State University, 220100, Urgench, UzbekistanА. YusupovTashkent University of Information Technologies Named after Al-Khwarizmi, 100200, Tashkent, Uzbekistan

Technical Physics Lettersjournal2021en

ABI

Annotatsiya

The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, trapezoidal, or triangular shape. It is shown that, for the structures under consideration, the temperature in the middle of the transistor is lower than along its lateral edges near the source and drain.

Mavzular

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Thin-Film Transistor Technologies

Identifikatorlar

DOI: 10.1134/s1063785021060055

Iqtiboslar va manbalar

5 ta iqtibos 14 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada