B. O. Jabbarova

8 ta ish

Urgench State University, Urgench, Uzbekistan

Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
PreprintAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
ABI
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1
MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
ABI
Linearized KdV equation on a metric graph
Z. A. Sobirov, Maqsad. I. Akhmedov, O.V. Karpova +1
MaqolaAdvanced Mathematical Physics ProblemsNanosystems Physics Chemistry Mathematics20153 iqtibos
ABI
The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov
MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos
ABI
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2
MaqolaSemiconductor materials and devices20241 iqtibos
ABI
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5
MaqolaAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos
ABI
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1
MaqolaSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
ABI
First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations
M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2
Maqola2D Materials and ApplicationsEast European Journal of Physics20260 iqtibos
ABI