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Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

A. É. AtamuratovDepartment of Physics, Urgench State University, 14, Khamid Olimjan str., Urgench, 220100, Khorezm, UzbekistanB. O. JabbarovaDepartment of Physics, Urgench State University, 14, Khamid Olimjan str., Urgench, 220100, Khorezm, UzbekistanM. M. KhalilloevDepartment of Physics, Urgench State University, 14, Khamid Olimjan str., Urgench, 220100, Khorezm, UzbekistanD. R. RajapovDepartment of Physics, Urgench State University, 14, Khamid Olimjan str., Urgench, 220100, Khorezm, UzbekistanAhmed YusupovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, 108 Amir Temur str., Tashkent, 100084, UzbekistanJean Chamberlain ChedjouInstitute of Smart Systems Technologies, University of Klagenfurt, 9020, Klagenfurt, AustriaGurdial BluganLaboratory for High Performance Ceramics, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, SwitzerlandKamoladdin SaidovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, 108 Amir Temur str., Tashkent, 100084, Uzbekistan

Micro and Nanostructuresjournal2024en

ABI

Annotatsiya

In this work the impact of the doping profile in the source and drain areas on the self-heating effect in SOI FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analytical profiles are considered. The impact of the doping profile on the threshold voltage and on the ratio I on /I off at different doping levels of the channel is also considered. To consider the self-heating effect the thermodynamic transport model in TCAD Sentaurus software is used for simulation. The results of simulation show that self-heating effect, threshold voltage, and Ion/Ioff ratio considerably depend on the doping profile in source and drain areas. • The impact of the doping profile in the source and drain areas on the self-heating effect in FinFET is simulated at different doping levels in the channel. Constant profile as well as two types of analytical profiles are considered. • The impact of the doping profile on the threshold voltage and on the ratio I on /I off at different doping levels of the channel is also considered. • The results of simulation show that the highest lattice temperature in the center of the channel takes place in the transistor with a constant profile in the source (drain) area. Whilst the lowest lattice temperature takes place in a transistor with an analytical profile and with a concentration at the end of the profile which is equal to the doping level in the channel.

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Mavzular

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Electrostatic Discharge in Electronics

Identifikatorlar

DOI: 10.1016/j.micrna.2024.208015

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