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Ahmed Yusupov

13 ta ish

Department of Electronics and Radio Engineering, Tashkent University of Information Technologies, A. Temur Str., 108, Tashkent 100200, Uzbekistan

  1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    MaqolaSemiconductor materials and devicesApplied Sciences20203 iqtibos
    ABI

  2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    MaqolaSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos
    ABI

  3. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  4. On the Convergence of an Efficient and Robust Dynamic Neural Network Concept with Application to Solving Traveling Salesman Problems

    Elnur Norov, Shakhzod Tashmetov, Khabibullo Nosirov +3

    MaqolaMetaheuristic Optimization Algorithms ResearchWSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS20221 iqtibos
    ABI

  5. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  6. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Maqola2D Materials and ApplicationsApplied Sciences20231 iqtibos
    ABI

  7. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 iqtibos
    ABI

  8. Formation and electrical properties of anisotype heterojunctions p-Cu2ZnSnSe4 /n-GaAs

    Ahmed Yusupov, Abdukhalil A. Tulyaganov, Zafar Turaev +2

    MaqolaChalcogenide Semiconductor Thin FilmsDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 iqtibos
    ABI

  9. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    MaqolaAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 iqtibos
    ABI

  10. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos
    ABI

  11. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos
    ABI

  12. From Evolution to Prospects: Mechanisms, Advances, and Challenges of Avalanche Photodiodes

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov

    MaqolaAdvanced Optical Sensing Technologies20250 iqtibos
    ABI

  13. Field-Effect Photodetectors Based on TMDCs: State of the Art and Future Trends

    Ahmed Yusupov, Elaman Nurullaev, K. Sattarov +1

    Maqola2D Materials and Applications20250 iqtibos
    ABI