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e-Journal of Surface Science and Nanotechnology

10 ta ish

Jurnal · ISSN 1348-0391

  1. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 iqtibos
    ABI

  2. Computer Simulation of Scattering Xe<sup>+</sup> Ions from InP(001)❬110❭ Surface at Grazing Incidence

    Karimov Mukhtorjon Karimberganovich, Matchоnov Khusniddin Jamoladdinovich, Otaboeva Kamola Uchkun qizi +1

    MaqolaIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology201911 iqtibos
    ABI

  3. Low Energy Ar<sup>+</sup> Ion Scattering on InGaP(001) Surface

    Karimov Mukhtorjon Karimberganovich, Kutliev Uchkun Otoboyevich, Ismailov Shavkat Ko'ziyevich +1

    MaqolaIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology20207 iqtibos
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 iqtibos
    ABI

  5. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  6. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    MaqolaAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 iqtibos
    ABI

  7. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos
    ABI

  8. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  9. Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

    G. Gulyamov, Gulnoza Majidova, Saodat Madumarova +1

    MaqolaAdvanced Research in Systems and Signal Processinge-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  10. Structural, Compositional, and Photoluminescence Properties of CsPbBr<sub>3</sub> Thin Films Grown by Single-source Thermal Vacuum Chemical Vapor Deposition

    R. R. Kabulov, L. O‘. Shuhratova, K. T. Suyarov +2

    MaqolaPerovskite Materials and Applicationse-Journal of Surface Science and Nanotechnology20250 iqtibos
    ABI