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Sh. N. Usmonov

45 ta ish

Academy of Sciences of Uzbekistan

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  2. Thermovoltaic properties of technical silicon melted by solar radiation

    A.S. Saidov, A. A. Abakumov, М. С. Саидов +2

    MaqolaDiverse Industrial Engineering TechnologiesApplied Solar Energy200711 iqtibos
    ABI

  3. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 iqtibos
    ABI

  4. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  5. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20198 iqtibos
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  12. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 iqtibos
    ABI

  13. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  14. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
    ABI

  15. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  16. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  17. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 iqtibos
    ABI

  18. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    A.S. Saidov, Sh. N. Usmonov, М. С. Саидов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20153 iqtibos
    ABI

  19. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  20. Structure and photoelectric properties of Si1 − x Sn x epilayers

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20103 iqtibos
    ABI

  21. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  22. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, A.S. Saidov, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20092 iqtibos
    ABI

  23. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20102 iqtibos
    ABI

  24. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 iqtibos
    ABI

  25. Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

    Sh. N. Usmonov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20162 iqtibos
    ABI