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Sh. N. Usmonov

45 ta ish

Uzbek Academy of Sciences

  1. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    A.S. Saidov, Sh. N. Usmonov, U. Kh. Rakhmonov

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 iqtibos
    ABI

  2. Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

    М. С. Саидов, A.S. Saidov, Sh. N. Usmonov

    MaqolaThermal Radiation and Cooling TechnologiesApplied Solar Energy20082 iqtibos
    ABI

  3. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, A.S. Saidov, М. С. Саидов +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20091 iqtibos
    ABI

  4. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    A.S. Saidov, A. Yu. Leĭderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20201 iqtibos
    ABI

  5. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  6. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    MaqolaSilicon Nanostructures and PhotoluminescenceSilicon20241 iqtibos
    ABI

  7. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20071 iqtibos
    ABI

  8. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20081 iqtibos
    ABI

  9. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20131 iqtibos
    ABI

  10. Thermovoltaic properties of technical silicon melted by solar radiation

    A.S. Saidov, A. A. Abakumov, М. С. Саидов +2

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20071 iqtibos
    ABI

  11. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20080 iqtibos
    ABI

  12. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, A.S. Saidov, М. С. Саидов +1

    MaqolaInsect and Pesticide ResearchApplied Solar Energy20090 iqtibos
    ABI

  13. Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

    A.S. Saidov, А.Ю. Лейдерман, Sh. N. Usmonov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceФизика и техника полупроводников20180 iqtibos
    ABI

  14. Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure

    A.S. Saidov, Sh. N. Usmonov, A B Karshiev +1

    MaqolaSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20220 iqtibos
    ABI

  15. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

    A.S. Saidov, Sh. N. Usmonov, U. Kh. Rakhmonov

    MaqolaDiamond and Carbon-based Materials ResearchPhysical Sciences and Technology20230 iqtibos
    ABI

  16. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    A.S. Saidov, Sh. N. Usmonov, O. Z. Turgunov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20230 iqtibos
    ABI

  17. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, A.S. Saidov, Sh. N. Usmonov +3

    PreprintGaN-based semiconductor devices and materialsResearch Square20230 iqtibos
    ABI

  18. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

    MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  19. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

    MaqolaGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos
    ABI

  20. Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

    S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1

    MaqolaAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques20260 iqtibos
    ABI