GaN-based semiconductor devices and materials

71 ta ish

The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium
M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2
MaqolaSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 iqtibos
ABI
Changing the Voltage of the p-n Junction in a Magnetic Field
G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova
MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 iqtibos
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 iqtibos
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20232 iqtibos
ABI
The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films
S. A. Azimov, D. A. Aronov, V. M. Rubinov +1
MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 iqtibos
ABI
Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates
Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5
MaqolaGaN-based semiconductor devices and materialsJournal of Applied Physics20001 iqtibos
ABI
Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates
Sh. U. Yuldashev, Г. Н. Панин, Sungwoo Choi +7
MaqolaZnO doping and propertiesJapanese Journal of Applied Physics20031 iqtibos
ABI
Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos
ABI
Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2
MaqolaGaN-based semiconductor devices and materialsRussian Physics Journal19880 iqtibos
ABI
UHF generation in sub-micron layers of GaAs
G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov
MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19890 iqtibos
ABI
Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7
MaqolaGaN-based semiconductor devices and materialsMaterials science forum19970 iqtibos
ABI
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
М. В. Максимов, A. V. Sakharov, W. V. Lundin +7
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19970 iqtibos
ABI
Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5
MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos
ABI
High-temperature diode formed by epitaxial GaP layers
M. M. Sobolev, В. Г. Никитин
MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
ABI
HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5
MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
ABI
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7
MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
ABI
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11
MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
ABI
On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process
A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos
ABI
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos
ABI
Electrical and Optical Properties of Highly Strained GaN Epilayers
A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8
MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
ABI
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos
ABI
Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy
С. И. Степанов, D. Tsvetkov, A. E. Cherenkov
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos
ABI
Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions
Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos
ABI
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov +4
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
ABI
Photoinduced self-organization of gallium nanowires on a GaN surface
D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin
MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos
ABI