G. F. Karavaev

7 ta ish

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Nonlinear theory of recombination waves in semiconductors

   G. F. Karavaev, Konstantin Zolnikov

   MaqolaNonlinear Photonic SystemsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000126

2. Nonlinear theory of surface-helical instability of a semiconductor plasma. II. Calculation of linear parameters

   G. F. Karavaev, Борис Андреевич Успенский, N. L. Chuprikov

   MaqolaFluid Dynamics and Thin FilmsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000127

3. Experimental investigation of the nonlinear properties of the surface helical instability in germanium

   G. F. Karavaev, G. F. Karlova, V. I. Gaman

   MaqolaLaser-induced spectroscopy and plasmaRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000092

4. UHF generation in sub-micron layers of GaAs

   G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19890 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000130

5. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

   С. И. Борисенко, G. F. Karavaev

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000228

6. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

   G. F. Karavaev, В. Н. Чернышов

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20010 iqtibos

   ABIABI:AkademIndex/openalex/2001.article.000200

7. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

   G. F. Karavaev, В. Н. Чернышов

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20060 iqtibos

   ABIABI:AkademIndex/openalex/2006.article.000303