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Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

G. F. KaravaevSiberian Physicotechnical Institute at Tomsk State University, Siberian Division, Russian Academy of Sciences, Novosobornaya pl. 1, Tomsk, 634050, RussiaВ. Н. ЧернышовSiberian Physicotechnical Institute at Tomsk State University, Siberian Division, Russian Academy of Sciences, Novosobornaya pl. 1, Tomsk, 634050, Russia

Semiconductorsjournal2001en

ABI

Annotatsiya

The X-electron resonance tunneling in AlAs/GaAs(111) heterostructures with AlAs electrodes was considered. Calculations of the model with potential discontinuities at the boundaries were carried out using the scattering matrix method. The complex band structure was calculated by the empirical pseudopotential method. Resonance peaks in the transmission coefficients, related to X-states in AlAs and L-states in GaAs, were found. A model describing these processes is suggested.

Mavzular

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Advanced Chemical Physics Studies

Identifikatorlar

DOI: 10.1134/1.1340299

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