T. V. Shubina

3 ta ish

Russian Academy of Sciences

1. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000109

2. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

   V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000162

3. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000191