Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
V. V. MamutinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. Н. ЖмерикA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgT. V. ShubinaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgА. А. ТороповA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. LebedevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. A. VekshinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. V. IvanovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
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It is shown that GaN films can be grown by molecular-beam epitaxy with plasma activation of the nitrogen by a magnetron rf discharge in a specially constructed coaxial source with capacitive coupling. A growth rate of ∼0.1 μm/h is obtained on GaAs and sapphire substrates, and ways are found for optimizing the design of the plasma source in order to increase the growth rate. The electrophysical and luminescence properties of undoped epitaxial films are investigated at temperatures ranging all the way to room temperature.
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