А. А. Торопов

1 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

   V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000162