Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. АбрамовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. G. DeryaginA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. G. DeryaginA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. I. KokhanovskiǐA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. KuchinskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgEdik U. RafailovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgG. S. SokolovskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. N. Tret’yakovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
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Results are presented of studies of the photoluminescence properties of epitaxial layers of AlxGa1−x As solid solutions grown by liquid-phase epitaxy with nonequilibrium crystallization achieved by ultrafast rates of cooling of the flux (V∼102–103 °C/s). The photoluminescence characteristics obtained indicate that the epitaxial layers are of high quality. It is also observed that when samples with x buff=0.5–0.55 are exposed to laser radiation of power density ∼1 kW/cm2 at a temperature of 77 K, the spectral composition of the radiation undergoes irreversible changes caused by the formation of an arsenic vacancy (V As)-donor impurity complex.
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