R. R. Bebitov

3 ta ish

Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

1. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.001003

2. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   MaqolaCalibration and Measurement TechniquesLow Temperature Physics20234 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.437743

3. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.002075