Distribution of impurities in base-depleted region of diode temperature sensor
R. R. BebitovPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanO. A. AbdulkhaevPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanD. M. YodgorovaPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanD. B. IstamovPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanSh. M. KuliyevPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanA. A. KhakimovPhysical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, UzbekistanSh.A. Khodjakova A.B. BobonazarovTurin Polytechnic University in Tashkent 2 , Tashkent 100095, UzbekistanA. Z. Rakhmatov“FOTON” Joint Stock Company 3 , Tashkent 100047, Uzbekistan
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The performance of diode temperature sensors depends on their base-depleted region thickness and impurity distribution profile. In this article, we study the boron diffusion process in the thin base region with a thickness of about 1 μm. We show that, for the proposed p+–n–p temperature sensor structure, the impurity distribution in the n region has the form of an asymmetric parabola, with an extreme concentration point shifted towards the “upper” p+ region.
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