A. Z. Rakhmatov

15 ta ish

“FOTON” Joint Stock Company, Tashkent, Uzbekistan

Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 iqtibos
ABI
Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
MaqolaCalibration and Measurement TechniquesLow Temperature Physics20234 iqtibos
ABI
Influence of neutron radiation on breakdown voltage of silicon voltage limiter
A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2
MaqolaEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 iqtibos
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
MaqolaChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 iqtibos
ABI
Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons
M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6
MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20101 iqtibos
ABI
Methods to decrease losses of energy generated by solar electrical modules
A. V. Karimov, D. M. Yodgorova, A. Z. Rakhmatov +1
MaqolaPhotovoltaic System Optimization TechniquesApplied Solar Energy20110 iqtibos
ABI
Thermal model of the limiter diode
A. Z. Rakhmatov, O. A. Abdulkhaev, A. V. Karimov +1
MaqolaPulsed Power Technology ApplicationsJournal of Engineering Physics and Thermophysics20120 iqtibos
ABI
Features of producing an ohmic contact to frontal surfaces of photoconversion structures
A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1
MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 iqtibos
ABI
Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters
A. Z. Rakhmatov
MaqolaAdvancements in Semiconductor Devices and Circuit DesignSemiconductors20140 iqtibos
ABI
On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. Karimov, A. Z. Rakhmatov, S. P. Skorniakov +3
MaqolaSemiconductor materials and interfacesRadioelectronics and Communications Systems20170 iqtibos
ABI
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3
MaqolaPulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 iqtibos
ABI
A High Gain JFET Amplifier with Dynamic Load
Abdulaziz Karimov, B. M. Kamanov, D. M. Yodgorova +3
MaqolaSemiconductor Lasers and Optical Devices2020 International Conference on Information Science and Communications Technologies (ICISCT)20200 iqtibos
ABI
The use of the past tensesin German and English
Yarash Ruziev, Samandar Khudoev, A. Z. Rakhmatov
MaqolaLexicography and Language StudiesACADEMICIA An International Multidisciplinary Research Journal20210 iqtibos
ABI
The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
ABI
The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions
Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2
MaqolaIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos
ABI