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A. V. Karimov

45 ta ish

Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Mavlanova 2b, Tashkent 700084, Uzbekistan

  1. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

    A. V. Karimov, D. A. Karimova

    MaqolaSemiconductor materials and interfacesMaterials Science in Semiconductor Processing20035 iqtibos
    ABI

  2. Some features of photocurrent generation in single- and multibarrier photodiode structures

    A. V. Karimov, D. M. Yodgorova

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 iqtibos
    ABI

  3. A compensation method for measuring the junction temperature of a p +-p-n + silicon structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3

    MaqolaSemiconductor materials and interfacesInstruments and Experimental Techniques20133 iqtibos
    ABI

  4. Features of the performance of a transient voltage suppressor in the pulsed mode

    A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

    MaqolaPulsed Power Technology ApplicationsSemiconductors20133 iqtibos
    ABI

  5. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20163 iqtibos
    ABI

  6. Features of the temperature properties of a field-effect transistor in a current-limiting mode

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20133 iqtibos
    ABI

  7. Influence of neutron radiation on breakdown voltage of silicon voltage limiter

    A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2

    MaqolaEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 iqtibos
    ABI

  8. Thermoelectric converter

    A. V. Karimov, Sh. N. Bakhronov

    MaqolaAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters19991 iqtibos
    ABI

  9. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 iqtibos
    ABI

  10. Research of structures with corrugated photoreceiving surface

    A. V. Karimov

    MaqolaOptical Coatings and GratingsSemiconductor Physics Quantum Electronics & Optoelectronics20041 iqtibos
    ABI

  11. Investigation of the heat transfer processes under the action of pulse power

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20121 iqtibos
    ABI

  12. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    MaqolaSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 iqtibos
    ABI

  13. Research of Spectral Characteristics of a Thin-Film Structure with a Metal-Semiconductor Barrier

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova

    MaqolaSurface Roughness and Optical MeasurementsFrontiers in Optics + Laser Science APS/DLS20191 iqtibos
    ABI

  14. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    BobSemiconductor materials and interfacesInTech eBooks20111 iqtibos
    ABI

  15. Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    MaqolaSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics20111 iqtibos
    ABI

  16. AFM and XRD studies of GaAs surface after anisotropic etching

    N. L. Dmitruk, V.P. Kladko, Р. В. Конакова +1

    MaqolaOptical Coatings and GratingsThe European Physical Journal Applied Physics20041 iqtibos
    ABI

  17. Solar cells of Al x Ga 1-x As/GaAs-type with microrelief boundary

    N. L. Dmitruk, O. Yu. Borkovskaya, В. П. Костылев +3

    Maqolasolar cell performance optimization20040 iqtibos
    ABI

  18. Investigation of the electrical characteristics of reteroepitaxial structures as function of microrelief and manufacturing technology features

    N. L. Dmitruk, A. V. Karimov, Р. В. Конакова +2

    Maqolasolar cell performance optimization20050 iqtibos
    ABI

  19. hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction

    A. V. Karimov, Physics-Sun"

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20050 iqtibos
    ABI

  20. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

    Maqolasolar cell performance optimizationSemiconductors20060 iqtibos
    ABI

  21. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    MaqolaElectric Power Systems and ControlInstruments and Experimental Techniques20060 iqtibos
    ABI

  22. Physical-technological bases of reception sharp p–n-transition

    A. V. Karimov, D. M. Yodgorova, Sh.sh. Yuldashev +1

    MaqolaSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 iqtibos
    ABI

  23. Estimation of redistribution of potential in three-barrier structure

    A. V. Karimov, D. M. Yodgorova, Sh. Sh. Boltaeva +1

    MaqolaSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 iqtibos
    ABI

  24. Study of photoelectric characteristics of a microphoto terminal

    A. V. Karimov, D. M. Yodgorova, U. M. Buzrukov +2

    MaqolaAdvanced optical system designDOAJ (DOAJ: Directory of Open Access Journals)20060 iqtibos
    ABI

  25. Optimization of carrier concentration distribution across epitaxial layer thickness

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

    MaqolaSemiconductor Quantum Structures and DevicesSHILAP Revista de lepidopterología20070 iqtibos
    ABI