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D. M. Edgorova

7 ta ish

Tashkent State Technical University, Tashkent, Republic of Uzbekistan

  1. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 iqtibos
    ABI

  2. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20071 iqtibos
    ABI

  3. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

    D. M. Edgorova, F. M. Ashrapov

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 iqtibos
    ABI

  4. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    MaqolaElectric Power Systems and ControlInstruments and Experimental Techniques20060 iqtibos
    ABI

  5. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 iqtibos
    ABI

  6. Photocurrent amplification effect of the fet gate p–n junction

    D. M. Edgorova

    MaqolaPhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics20090 iqtibos
    ABI

  7. Features of producing an ohmic contact to frontal surfaces of photoconversion structures

    A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 iqtibos
    ABI