Maqola

Some features of photocurrent generation in single- and multibarrier photodiode structures

A. V. KarimovPhysical-Technical Institute, Physics-Sun Scientific Production Association, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, UzbekistanD. M. YodgorovaPhysical-Technical Institute, Physics-Sun Scientific Production Association, Uzbekistan Academy of Sciences, ul. G. Mavlyanov 2b, Tashkent, 100084, Uzbekistan

Semiconductorsjournal2010en

ABI

Annotatsiya

In contrast to single barrier photodiode structures, multibarrier ones exhibit the effect of increasing the number of photogenerated carriers in the entire range of operating voltages, whereas the photocurrent generation in avalanche and injection photodiodes is characterized by the threshold behavior and is associated with changes in the dark carrier density. The suggested interpretation of the effect of internal photoelectric amplification will make it possible to estimate experimental current or voltage gains and detect photoelectric amplification in photodiode structures irrespective of their type.

Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Thermography and Photoacoustic Techniques

Identifikatorlar

DOI: 10.1134/s1063782610050179

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