Maqola

Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

A. V. KarimovPhysicotechnical Institute of the Science and Production Association “Solar Physics”, Academy of Sciences of the Republic of Uzbekistan, 2b Bodomzor Iuli Str., Tashkent, 100084, UzbekistanD. P. DzhuraevPhysicotechnical Institute of the Science and Production Association “Solar Physics”, Academy of Sciences of the Republic of Uzbekistan, 2b Bodomzor Iuli Str., Tashkent, 100084, UzbekistanSh. M. KulievPhysicotechnical Institute of the Science and Production Association “Solar Physics”, Academy of Sciences of the Republic of Uzbekistan, 2b Bodomzor Iuli Str., Tashkent, 100084, UzbekistanA. A. TuraevPhysicotechnical Institute of the Science and Production Association “Solar Physics”, Academy of Sciences of the Republic of Uzbekistan, 2b Bodomzor Iuli Str., Tashkent, 100084, Uzbekistan

Journal of Engineering Physics and Thermophysicsjournal2016en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1007/s10891-016-1404-x

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