On mechanism of radiative sensitivity of power diode direct voltage drop
A. V. KarimovPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, UzbekistanA. Z. Rakhmatov“Foton” Joint-stock Company, Tashkent, UzbekistanS. P. SkorniakovNovosibirsk Plant of Semiconductor Devices, Novosibirsk, RussiaD. M. YodgorovaPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, UzbekistanA. A. KarimovPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, UzbekistanSh. M. KulievPhysical-Technical Institute of the Scientific Association “Physics-Sun” of Academy Sciences of Republic of Uzbekistan, Tashkent, Uzbekistan
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There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Φe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons.
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