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L. G. Lavrent’eva

4 ta ish

V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

  1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

    L. G. Lavrent’eva

    Maqolananoparticles nucleation surface interactionsRussian Physics Journal19800 iqtibos
    ABI

  2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

    L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

    MaqolaOptical Coatings and GratingsRussian Physics Journal19810 iqtibos
    ABI

  3. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

    Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

    MaqolaGaN-based semiconductor devices and materialsRussian Physics Journal19880 iqtibos
    ABI

  4. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

    И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19920 iqtibos
    ABI