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Maqola

Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

L. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

Russian Physics Journaljournal1980en

ABI

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Annotatsiya mavjud emas.

Mavzular

nanoparticles nucleation surface interactions Chalcogenide Semiconductor Thin Films Crystallization and Solubility Studies

Identifikatorlar

DOI: 10.1007/bf00895762

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