V. M. Rubinov

4 ta ish

S. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19832 iqtibos

   ABIABI:AkademIndex/openalex/1983.article.000065

2. Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

   V. M. Rubinov, M. Tuychiev

   MaqolaChemical and Physical Properties of Materialsphysica status solidi (a)19821 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000071

3. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 iqtibos

   ABIABI:AkademIndex/openalex/1983.article.000076

4. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   MaqolaSurface and Thin Film Phenomenaphysica status solidi (a)19840 iqtibos

   ABIABI:AkademIndex/openalex/1984.article.000100